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APT40GT60BR
600V 80A
Thunderbolt IGBTTM
TO-247
The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed.
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
G
C
E
C
G E
All Ratings: TC = 25C unless otherwise specified.
Collector-Gate Voltage (RGE = 20K) Emitter-Collector Voltage Gate-Emitter Voltage
JE SP CT EC IVE IF T IC EC AT H IO NI N CA
1
L
600 600 15 20 80 40 160 80 40 350 300
TYP
APT40GT60BR
UNIT
Volts
Continuous Collector Current @ TC = 25C
Continuous Collector Current @ TC = 110C Pulsed Collector Current @ TC = 25C
Amps
Pulsed Collector Current
1
@ TC = 110C
2
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts C
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions
MIN
MAX
UNIT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 500A, Tj = 25C)
600 -15 3
4
5 2.5 2.8 80 2000 100
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C)
1.6
2.0
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
B
I CES
O
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C)
A nA
052-6222 Rev -
I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT40GT60BR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V I C = I C2 MIN TYP MAX UNIT
2200 220
pF
Gate-Emitter Charge
JE SP CT EC IVE IF T IC EC AT H IO NI N CA
VCC = 0.5VCES
L
190 80 15 10 34
nC ns
130
Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time
Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10
Turn-off Delay Time Fall Time
115 125 25 40
Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10
ns
190 70
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
1.5 0.9 2.4 25 40
mJ
TJ = +150C
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10
ns
Turn-off Delay Time Fall Time
160 65
B
Total Switching Losses
TJ = +25C
1.8
mJ S
THERMAL CHARACTERISTICS
Symbol RJC RJA Torque
1 2 3
O
Forward Transconductance
VCE = 20V, I C = I C2
4
Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN
TYP
MAX
UNIT C/W lb*in
0.36 40 10
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25, L = 200H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6222 Rev -

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